Description
140V 100W 10A PNP TO-3P-3 Bipolar Transistors – BJT ROHS Specifications : Collector Cut-Off Current (Icbo): 5uA Collector-Emitter Breakdown Voltage (Vceo): 140V Power Dissipation (Pd): 100W Collector Current (Ic): 10A Transition Frequency (fT): 30MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2V@7A,700mA Transistor Type: PNP Operating Temperature: +150℃@(Tj)






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